2011. 6. 21 1/6 semiconductor technical data kf9n25d n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converters and switching mode power supplies. features h v dss = 250v, i d = 7.5a h drain-source on resistance : r ds(on) =0.4 ? @v gs = 10v h qg(typ) = 14.5nc maximum rating (ta=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 7.5 a @t c =100 ? 4.74 pulsed (note1) i dp 25 single pulsed avalanche energy (note 2) e as 126 mj repetitive avalanche energy (note 1) e ar 4.0 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 54.3 w derate above 25 ? 0.43 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.3 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w g d s pin connection dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source
2011. 6. 21 2/6 kf9n25d revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 250 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.22 - v/ ? drain cut-off current i dss v ds =250v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =3.75a - 0.31 0.40 ? dynamic total gate charge q g v ds =200v, i d =9a v gs =10v (note4,5) - 14.5 - nc gate-source charge q gs - 3.2 - gate-drain charge q gd - 6.3 - turn-on delay time t d(on) v dd =125v i d =9a r g =25 ? (note4,5) - 15 - ns turn-on rise time t r - 25 - turn-off delay time t d(off) - 30 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 560 - pf output capacitance c oss - 96 - reverse transfer capacitance c rss - 15 - source-drain diode ratings continuous source current i s v gs 2011. 6. 21 3/6 kf9n25d revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 1.2 0.4 0 0.2 0.6 1.0 0.8 016 824 12 420 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 3.75a v gs = 0v i ds = 250 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =7v v gs =10v v gs =7v v ds =30v 25 c t c =100 c t c =100 c v gs =5v
2011. 6. 21 4/6 kf9n25d revision no : 0 drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 10 1 10 2 10 4 10 3 10 2 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 0 6 2 4 12 10 8 75 150 125 50 100 25 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) gate - charge q g (nc) 0 12 10 6 2 4 8 14 16 6 2 10 8 12 4 0 fig8. q g - v gs gate - source voltage v gs (v) i d =9a fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 5 15 25 35 10 20 30 40 c rss c oss c iss v ds = 200v time ( sec ) fig11. transient thermal response curve transient thermal resistance - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm singl e pu ls e duty =0.5 0.02 0.0 5 0.1 0.2 0.01 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 1 10 0
2011. 6. 21 5/6 kf9n25d revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2011. 6. 21 6/6 kf9n25d revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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